<p>针对MOSFET的最大问题，我们正采取以下对策：“如何有效利用元件面积以有效降低导通电阻”</p>
<p>（1）高电压：下一页将介绍通过先进的超结工艺降低Rdrift电阻。<br />
（2）低电压：通过对沟槽结构的精细图形化可最大限度降低Rch电阻，采用薄晶片降低Rsub电阻。</p>
<p><img alt="影响MOSFET导通电阻的因素" data-entity-type="file" data-entity-uuid="2203a905-59a3-4324-a135-328a6d782bbd" src="/sites/default/files/inline-images/01_125.png" /></p>
<p><img alt="影响MOSFET导通电阻的因素" data-entity-type="file" data-entity-uuid="33c2a42b-5c6b-468e-97a2-679db77241ba" src="/sites/default/files/inline-images/02_130.png" /></p>
<p>图3-8影响MOSFET导通电阻的因素</p>
<p>文章来源：<a href="https://toshiba-semicon-storage.com/cn/semiconductor/knowledge/e-learni…;