<p>400Gbps的以太网（400GbE）正逐渐成为次时代数据中心的主流，而Beyond 400Gbps的研发也早已展开。对于高速化、宽带化的需求今后也将日益迫切。<br />
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村田的硅电容器尤其适合超宽带传输的光通信设备。<br />
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通过硅电容的独特构造、能够适应温度及电压变化的电容量稳定性、高电容密度与高超的集成化技术，村田将针对信号完整性的提高及小型化需求提供最佳的解决方案。<br />
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商品：无线电收发器、PON、PLT</p>
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<p><a href="https://www.murata.com/-/media/webrenewal/products/capacitor/siliconcap…;▼单击此处获得指导方针</a></p>
<img alt="图1" data-align="center" data-entity-type="file" data-entity-uuid="6ce8bf3a-07d6-42de-902b-9f7876b39563" src="/sites/default/files/inline-images/%E5%9B%BE1_2.PNG" /><img alt="TOSA" data-align="center" data-entity-type="file" data-entity-uuid="61fd6ab2-8022-436b-8cc4-eeed22c91f45" src="/sites/default/files/inline-images/TOSA.png" /><img alt="ROSA" data-align="center" data-entity-type="file" data-entity-uuid="7c719cfa-15bf-4e0d-b866-956e4d8573f4" src="/sites/default/files/inline-images/ROSA.png" />
<p><strong>1. 耦合电容器</strong></p>
<p>ULSC、BBSC、UBSC、XBSC系列采用了最适用于高频信号线上隔直器 （交流耦合）的设计，能够实现低插入损耗和反射损耗并带来特有的相位稳定性。</p>
<p>可应对从16kHz到100GHz＋（XBSC）、60GHz+ (UBSC)、40GHz（BBSC）、20GHz(ULSC）的多种频率。</p>
<p><strong>单端信号型</strong></p>
<p><img alt="单端信号型" data-entity-type="file" data-entity-uuid="01e3d2c4-e205-4412-8b77-ceb45a6d54e4" src="/sites/default/files/inline-images/%E5%8D%95%E7%AB%AF%E4%BF%A1%E5%8F%B7%E5%9E%8B.PNG" /></p>
<table border="1" width="100%">
<thead>
<tr>
<th bgcolor="#99CCFF">频率</th>
<th bgcolor="#99CCFF">系列</th>
</tr>
</thead>
<tbody>
<tr>
<td>20GHz</td>
<td><a href="https://www.murata.com/zh-cn/products/capacitor/siliconcapacitors/xbsc_…;
</tr>
<tr>
<td>40GHz</td>
<td><a href="https://www.murata.com/zh-cn/products/capacitor/siliconcapacitors/xbsc_…;
</tr>
<tr>
<td>60GHz+</td>
<td><a href="https://www.murata.com/zh-cn/products/capacitor/siliconcapacitors/xbsc_…;
</tr>
<tr>
<td>100GHz+</td>
<td><a href="https://www.murata.com/zh-cn/products/capacitor/siliconcapacitors/xbsc_…;
</tr>
</tbody>
</table>
<p><strong>差分信号型</strong></p>
<p><strong><img alt="差分信号型" data-entity-type="file" data-entity-uuid="7178dc9b-5b63-4773-a12d-6926087078a4" src="/sites/default/files/inline-images/%E5%B7%AE%E5%88%86%E4%BF%A1%E5%8F%B7%E5%9E%8B.PNG" /></strong></p>
<table border="1" width="100%">
<thead>
<tr>
<th bgcolor="#99CCFF">频率</th>
<th bgcolor="#99CCFF">系列</th>
</tr>
</thead>
<tbody>
<tr>
<td>60GHz+</td>
<td><a href="https://www.murata.com/en-global/products/capacitor/siliconcapacitors/u…;
</tr>
</tbody>
</table>
<p><strong>2. 去耦电容器</strong></p>
<p>WLSC、WBSC、UWSC最适合用于解决偏置电路上的去耦问题，有助于缩减空间受限的应用装置的体积。</p>
<p>例如在0101（0.25mm×0.25mm）尺寸上实现高达1nF的电容密度，尚且仅有村田的硅电容技术可以成功做到这一点。</p>
<p><strong>打线</strong></p>
<p><strong><img alt="打线" data-entity-type="file" data-entity-uuid="9a32773f-8420-45e5-a33b-dc6771f80c99" src="/sites/default/files/inline-images/%E6%89%93%E7%BA%BF_0.png" /></strong></p>
<table border="1" width="100%">
<thead>
<tr>
<th bgcolor="#99CCFF">频率</th>
<th bgcolor="#99CCFF">厚度</th>
<th bgcolor="#99CCFF">系列</th>
</tr>
</thead>
<tbody>
<tr>
<td>10GHz</td>
<td>100μm</td>
<td><a href="https://www.murata.com/zh-cn/products/capacitor/siliconcapacitors/wlsc"…;
</tr>
<tr>
<td>10GHz</td>
<td>250μm</td>
<td><a href="https://www.murata.com/zh-cn/products/capacitor/siliconcapacitors/wbsc_…;
</tr>
<tr>
<td rowspan="2">26GHz+</td>
<td>100μm</td>
<td rowspan="2"><a href="https://www.murata.com/zh-cn/products/capacitor/siliconcapacitors/uwsc"…;
</tr>
<tr>
<td>250μm</td>
</tr>
</tbody>
</table>
<p><strong>表面贴装</strong></p>
<p><img alt="表面贴装" data-entity-type="file" data-entity-uuid="8c262e6c-7d2f-48c4-a4c3-a7df817d1d41" src="/sites/default/files/inline-images/%E8%A1%A8%E9%9D%A2%E8%B4%B4%E8%A3%85.png" /></p>
<table border="1" width="100%">
<thead>
<tr>
<th bgcolor="#99CCFF">频率</th>
<th bgcolor="#99CCFF">系列</th>
</tr>
</thead>
<tbody>
<tr>
<td>20GHz+</td>
<td><a href="https://www.murata.com/zh-cn/products/capacitor/siliconcapacitors/xbsc_…;
</tr>
</tbody>
</table>
<p><strong>3. TOSA中介层</strong></p>
<p>利用村田的硅集成无源器件（Integrated Passive Device）技术，即可同时实现光通信设备的小型化及性能提升。举例而言，用于TOSA的硅中介层不但成功将以往需要分别装置的电容和电阻等部件全部集成于一体，同时还能够进一步提升适应温度及电压变化的稳定性。由此可以削减装配时间、实现小型化及性能的提升。</p>
<p><img alt="TOSA中介层" data-entity-type="file" data-entity-uuid="d28c81af-ddea-46e8-9722-211746ebeae0" src="/sites/default/files/inline-images/TOSA%E4%B8%AD%E4%BB%8B%E5%B1%822.png" /></p>
<p><strong>主要特点</strong></p>
<ul>
<li>接近于激光器和电吸收调制器的热膨胀系数（CTE）（4.2 ppm/K）</li>
<li>与氮化铝（AIN）基板同等的导热率（150W/m.K）</li>
<li>介电常数＝11.7</li>
<li>损耗角正切（Loss Tangent）＝0.005 @1GHz, 0.015 @10GHz</li>
</ul>
<p><strong>优点</strong></p>
<ul>
<li>提高可靠性</li>
<li>可应对宽带</li>
<li>小型化</li>
<li>减少元件数</li>
<li>薄型化</li>
<li>削减总成本</li>
</ul>
<img alt="TOSA中介层" data-align="center" data-entity-type="file" data-entity-uuid="abe0676d-9b8e-43f0-948f-025ad708a4c4" src="/sites/default/files/inline-images/TOSA%E4%B8%AD%E4%BB%8B%E5%B1%823.png" />
<p> </p>